发明名称 CHARGED PARTICLE BEAM APPARATUS
摘要 A charged particle beam apparatus is provided to control an irradiation angle of a gas-ion beam according to an arrangement state of a sliced specimen. A focused ion beam apparatus(3) manufactures a sliced specimen by processing a specimen, and observes the sliced specimen. A scanning electron microscope(4) observes the sliced specimen, and a gas-ion beam irradiation apparatus(5) performs finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen. A specimen stage(6) has at least one rotation axis, and the sliced specimen is fixed on the specimen stage. A specimen posture recognition member(7) recognizes a positional relation of the sliced specimen with respect to the specimen stage. A specimen stage control member(8) controls the specimen stage based on a specimen posture recognized by the specimen posture recognition member.
申请公布号 KR20070026130(A) 申请公布日期 2007.03.08
申请号 KR20060082735 申请日期 2006.08.30
申请人 SII NANO TECHNOLOGY INC. 发明人 TAKAHASHI HARUO;FUJII TOSHIAKI;IKKU YUTAKA;IWASAKI KOUJI;YAMAMOTO YO
分类号 H01J37/20;G01N1/28;H01J23/38 主分类号 H01J37/20
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