NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor element that is formed on a conductive substrate and has high breakdown-voltage characteristics.

SOLUTION: The nitride semiconductor element comprises: a base substrate, having a conductive substrate section and a high-resistance section; a first semiconductor layer made of a nitride semiconductor provided on the substrate; a second semiconductor layer that is provided on the first one and is made of a non-doped or n-type nitride semiconductor having a larger band gap than that of the first semiconductor layer; a first main electrode provided on the conductive section on the second semiconductor layer; a second main electrode provided on the high-resistance section on the second semiconductor layer; and a control electrode provided between the first and second main electrodes on the second semiconductor layer.

COPYRIGHT: (C)2007,JPO&INPIT