| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element having high avalanche withstand capability and low on-resistance properties. <P>SOLUTION: The nitride semiconductor element comprises a laminate, having a first semiconductor layer made of a nitride semiconductor and a second semiconductor layer that is provided on the first one, and is made of a non-doped or n-type nitride semiconductor having a larger band gap than that of the first semiconductor layer; a control electrode provided at a first region on the main surface of the laminate directly or via an insulating film; first and second main electrodes provided at second and third regions, respectively, adjacent to both the ends of the first region on the main surface of the laminate; and a third main electrode provided at a side opposite to the control electrode while sandwiching the second main electrode on the main surface of the laminate. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
