| 摘要 |
In a thin film capacitor, leakage current is reduced by suppressing electric field concentration. A first zirconium oxide layer (26A) is formed on a lower electrode (22) which is made of a conductive material. A buffer layer (28) composed of an amorphous material is formed on the first zirconium oxide layer (26A). A second zirconium oxide layer (26B) is formed on the buffer layer (28), and an upper electrode (24) made of a conductive material is formed on the second zirconium oxide layer (26B). ® KIPO & WIPO 2007
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