发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a rewiring structure capable of suppressing to the utmost an increase of the number of processes without using a support plate in a state of reduced risk of damage by handling; and also to provide its manufacturing method. <P>SOLUTION: The semiconductor device comprises: a semiconductor element 9; a plurality of element electrodes 11 formed on the principal surface of the semiconductor element 9; a first insulating film 12 for covering a principal surface side of the semiconductor element 9; a first metal wiring layer 15 as principal surface side rearrangement wiring with a one end side connected with a partial element electrode 11, and with the other end side connected with a metal bump 19 provided on the principal surface side serving as a principal surface side external connection terminal; a second metal wiring layer 17 as rear surface connection wiring with a one end side connected with the element electrode 11 different from the foregoing partial element electrode 11, and with the other end side extending to an opposite surface to the principal surface from the periphery of the semiconductor element 9; and a second insulating film 18 for covering each principal surface side. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007059493(A) 申请公布日期 2007.03.08
申请号 JP20050240516 申请日期 2005.08.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIKI KEIJI;HAMAYA TAKESHI;SAKASHITA TOSHIHIKO;OTA YUKITOSHI
分类号 H01L21/3205;H01L23/12;H01L23/52 主分类号 H01L21/3205
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