| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-power and high-efficiency nitride semiconductor light emitting element with low operating voltage and high electrostatic resistance. <P>SOLUTION: The nitride semiconductor light emitting element comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and a p-type cladding layer formed on the active layer. The current diffusion layer comprises a multi-layered (no less than three layers in total) thin film layer, which is a lamination of a first nitride semiconductor layer of In<SB>x</SB>Ga<SB>(1-x)</SB>N (0<x<1) and second nitride semiconductor layer of In<SB>y</SB>Ga<SB>(1-y)</SB>N (0≤y<1, y<x) laminated alternately. Furthermore, part of the laminated consecutive layers of the multi-layered thin film layer is doped with n-type dopant. Meanwhile, the other part of the multi-layered thin film layer is composed of undoped nitride semiconductor. <P>COPYRIGHT: (C)2007,JPO&INPIT |
