| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of driving at high speed and acquiring a good image with brightness unevenness inhibited even with fine pixels, and its manufacturing method. SOLUTION: A sidewall injection layer 40 which is an impurity ion injection region with a conductivity type reverse to a case where a PD9, an FD13, source-drain regions or the like of respective transistors are formed, a channel-stop layer 41 and a well 42 are formed inside a semiconductor substrate 2. The sidewall injection layer 40 is formed by injecting impurity ions inside from a surface of a groove 60 made in forming an element isolation part 44. COPYRIGHT: (C)2007,JPO&INPIT |
