| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a dielectric film by which the occurrence of crack on the dielectric film is suppressed even when the dielectric film is formed thick by a method using electrophoresis. SOLUTION: The method of forming the dielectric film includes a step for dipping a base material having arithmetic average surface roughness Ra≥1/2 and≤2 times of average particle diameter of dielectric particles and a counter electrode into a solvent containing the dielectric particles and a step for depositing the dielectric particles on the surface of the base material by applying voltage between the base material and the counter electrode. COPYRIGHT: (C)2007,JPO&INPIT
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