| 摘要 |
First and second address-selection information, as well as first and second read/write information, is contemporaneously provided to various enabling circuits. The enabling circuits can then enable one or more first memory cells based on the first address-selection and first read/write information, and further enable the one or more second memory cells based on the second address-selection information and read/write information. Data can then be written to, or read from, the enabled memory cells in a single memory-access cycle.
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