CIRCUIT AND METHOD FOR GENERATING INTERNAL SUPPLY VOLTAGE OF A SEMICONDUCTOR MEMORY DEVICE

摘要

A method and a circuit for generating an internal source voltage of a semiconductor memory device are provided to generate an internal source voltage having a short set-up time by using two driving circuits. A circuit for generating an internal source voltage of a semiconductor memory device includes a first driving circuit(1100), a second driving circuit(1200), and a resistive element(1400). The first driving circuit receives a first node voltage, generates a stable first output voltage having a value between first and second reference voltages based on the first and second reference voltages, and supplies the first output voltage to the first node. The second driving circuit receives a second node voltage, generates a stable second output voltage having a value between the first and second reference voltages based on the first and second reference voltages, and supplies the second output voltage to the second node. The resistive element is coupled between the first and second nodes. The internal source voltage is generated at the second node.