| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing device for obtaining a dielectric thin film with an ABO<SB>X</SB>type perovskite crystal structure whose dielectric constant is high and leak current is little. SOLUTION: A coating film formation device is constituted to have a coating unit for applying a coating liquid containing a precursor of a thin film with the crystal structure to a substrate; a heating unit for carrying out heating treatment as a pretreatment of baking; a substrate carrying means for carrying the substrate from the coating unit to the heating unit; a housing wherein the coating unit, the heating unit and the substrate carrying means are disposed; an air flow forming means for forming air flow in a carrying region; and a neutralization treatment part for neutralizing and eliminating CO<SB>2</SB>in gas taken in by the air flow forming means by alkaline component. Consequently, it is possible to restrain reaction between a compound in a coating film and CO<SB>2</SB>by carrying the substrate in the carrying region, while restraining CO<SB>2</SB>concentration in the carrying region and to form a path which induces leak current in the film. COPYRIGHT: (C)2007,JPO&INPIT
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