| 摘要 |
A method for producing a memory with high coupling ratio is provided. First, a shallow trench isolation is formed on a substrate to define an active area. Second, a spacer is formed at the sidewall of the shallow trench isolation. Third, the shallow trench isolation is etched such that the top of the spacer is higher than the surface of the shallow trench isolation. Fourth, a tunnel oxide is formed on the active area. Finally, a floating gate is formed on the tunnel oxide.
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