SEMICONDUCTOR DISTANCE MEASURING ELEMENT AND SOLID STATE IMAGING DEVICE

摘要

In order to transfer signal charges generated by a semiconductor photoelectric conversion element in opposite directions, the center line of a first transfer gate electrode (16a) and that of a second transfer gate electrode (16b) are arranged on the same straight line and a U-shaped first discharge gate electrode (12a) and a second discharge gate electrode (12b) are arranged to oppose to each other. The first discharge gate electrode (12a) discharges a background light charge generated by a background light in the electric charge generation region and the second discharge gate electrode (12b) discharges a background light charge generated by a background light in the electric charge generation region. The background light charge discharged by the first discharge gate electrode (12a) is received by a first discharge drain region (21a) and the background light charge discharged by the second discharge gate electrode (12b) is received by a second discharge drain region (21b).