发明名称 TARGET FOR ION PLATING USED FOR MANUFACTURING OF ZINC OXIDE-BASED ELECTROCONDUCTIVE FILM, ITS MANUFACTURING METHOD, AND METHOD FOR MANUFACTURING ZINC OXIDE-BASED ELECTROCONDUCTIVE FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a target which gives a zinc oxide-based electroconductive film having uniformity and high performance in an ion plating method while suppressing the generation of splash or without generating splash, and to provide a useful method for manufacturing the same. <P>SOLUTION: The target for forming the zinc oxide-based electroconductive film comprises a sintered compact mainly containing zinc oxide and is characterized in that the volume ratios of open and closed pores to the volume obtained from the external shape are 15-40% and &le;3.0%, respectively, and the generation of splash is inhibited during ion plating. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007056352(A) 申请公布日期 2007.03.08
申请号 JP20050246411 申请日期 2005.08.26
申请人 HAKUSUI TECH CO LTD 发明人 KUROIWA NOBUYUKI;TSUJI KAZUHIRO
分类号 C23C14/32;C04B35/453 主分类号 C23C14/32
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