| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-intensity light-emitting diode having a reflection layer. <P>SOLUTION: The high-intensity light-emitting diode includes a luminous structure, a non-alloy ohmic contact layer, a metal layer, and a substrate in this order. As a reflector, the metal layer is formed by a pure metal or metal nitride to attain an improved reflection factor. The non-alloy ohmic contact layer is interposed between the metal layer and the luminous structure, thus attaining required ohmic contact. For preventing the fusion between the metal layer and the non-alloy ohmic contact layer and for maintaining flatness in the reflection surface of the metal layer, an optical transmission layer is interposed between the metal layer and the non-alloy ohmic contact layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
