| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a single chip gyro device manufactured in a semi-conductor back end process and to improve the defect of every direction, such as a volume, performance, a cost, etc. to a conventional gyro by simplifying the circuit of the gyro device according to more excellent layout. <P>SOLUTION: The single chip gyro device includes: a substrate 10; a plurality of metal layers 31, 32, 33 and 34 formed in the substrate; a plurality of dielectric layers which include a lowermost dielectric layer 20 formed between the substrate and the lowermost metal layer, and the dielectric layer of the others by which every layer is formed among the plurality of the metal layers; and a plurality of via holes 40 connected with the metal layer, and exposed from the dielectric layer, and made so as not to undercut the dielectric layer. The plurality of the metal layers and the plurality of the dielectric layers become a mechanical coupling structure. <P>COPYRIGHT: (C)2007,JPO&INPIT |
