| 发明名称 |
METHOD AND APPARATUS FOR PROCESSING SUBSTRATE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To sufficiently flatten and dry a coating film applied on a wafer. <P>SOLUTION: A holding base 121 incorporating a heater 122 is provided in a processing vessel 120 of a flattening apparatus 71. A pressing plate 130 having a lower surface formed flat is arranged above the holding base 121. The pressing plate 130 is moved up and down by a vertical movement drive part 132 and moved down on the holding base 12 to press a resist film on the wafer W. The wafer W coated with a resist liquid is placed on the holding base 121. The wafer W on the holding based 121 is heated at a prescribed temperature by the heater 122 to dry the resist film. During the drying, the upper surface of the resist film is intermittently pressed by the pressing plate 130 to be flattened. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007054798(A) |
申请公布日期 |
2007.03.08 |
| 申请号 |
JP20050246453 |
申请日期 |
2005.08.26 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
SHINYA HIROSHI;TERADA SHOICHI;MIZUNO GOSHI;WAKAMOTO YUKIHIRO |
| 分类号 |
B05D3/12;B05C9/14;B05C11/02;B05C11/08;B05D3/02;G03F7/16;H01L21/288;H01L21/31;H01L21/312;H01L21/316;H01L21/3213;H01L21/768 |
主分类号 |
B05D3/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
