| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the area of a paraelectrics capacitor cannot be made smaller when generating a reference potential using the paraelectrics capacitor. SOLUTION: The ferroelectric semiconductor storage device includes: a reference bit line/BL connected to a sense amplifier circuit 11 and providing the reference potential to the sense amplifier circuit; a reference potential generation circuit 13 including a selection transistor 14 with one end connected to the reference bit line, and the paraelectrics capacitor 18 connected between the other end of the selection transistor and a dummy plate line DPL; and a dummy plate line driver 20 connected to the dummy plate line and driving the dummy plate line to a first voltage higher than the operating voltage of the sense amplifier circuit when generating the reference potential by the reference potential generation circuit. COPYRIGHT: (C)2007,JPO&INPIT
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