SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY SELECTIVE, AND THERMALLY RESILIENT SILICON, GERMANIUM, OR SILICON-GERMANIUM ETCH-STOP

摘要

A method and resulting etch-stop layer comprising a silicon-germanium layer and a dopant layer within the silicon-germanium layer. The silicon-germanium layer is comprised of less than about 70% germanium and contains one or more dopant elements selected from the group consisting of boron and carbon. The dopant layer has one or more of the dopant elements and an FWHM thickness value of less than 50 nanometers.