| 摘要 |
A semiconductor process for preventing the layer on a wafer edge from peeling is provided. First, a dielectric layer is formed on the front side of a substrate. Then, a photoresist layer is formed to cover the front side and part of the backside of the substrate. Thereafter, an edge rinsing process is carried out only on the backside of the substrate to remove the photoresist layer on the back of the substrate while retaining the photoresist layer on the wafer edge area.
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