PHASE CHANGE RANDOM ACCESS MEMORY AND METHOD OF OPERATING THE SAME

摘要

A PRAM(phase change random access memory) is provided to reduce the size of a transistor by lowering the reset current of a PRAM. A PRAM includes a switching device and a storage node connected to the switching device. The storage node includes a first electrode, a phase change layer, a heat generating high-efficient unit and a second electrode. The heat generating high-efficient unit is one of a CNT(carbon nano tube) layer, a nano particle layer or a nano dot layer. The heat generating high-efficient unit includes at least two sequentially stacked layers.