| 摘要 |
A method of manufacturing a CMOS image sensor is provided to acquire stable electrical properties from a pixel region and a logic region, to prevent the damage of the sensor due to the use of a hard mask and to restrain the generation of ion channeling. A gate conductive layer is formed on the entire surface of a substrate(30). A first gate electrode is formed within a logic region by etching selectively the gate conductive layer using a first photoresist pattern as an etch mask. The first photoresist pattern is removed therefrom. A second gate electrode(34b) is formed within a pixel region by etching the gate conductive layer using a second photoresist pattern as an etch mask. A curing process is performed on the second photoresist pattern. An ion implantation mask is formed on the second photoresist pattern. An ion implantation process is performed on the resultant structure by using the ion implantation mask. The second gate electrode is a gate electrode of a transfer transistor.
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