| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase speed of amplification operation of a sense amplifier without flowing an unnecessary current in a diode formed by a P type region and N type region even if a normal semiconductor substrate is used or a SOI substrate is used, in a semiconductor integrated circuit incorporating a memory. <P>SOLUTION: The semiconductor integrated circuit is provided with a memory cell performing input/output of data to/from a set of bit lines and the circuit when word lines are activated, a first transistor and a second transistor having a gate to which a set of read-out signal is applied from the memory cell through a set of bit line, a third transistor and a fourth transistor supplying a drain current to the first and second transistors, and a sense amplifier including a first capacitor and a second capacitor connected respectively between the set of bit lines and back gates of the third and the fourth transistors, and reads out data from the memory cell. <P>COPYRIGHT: (C)2007,JPO&INPIT |
