| 摘要 |
PROBLEM TO BE SOLVED: To provide a new system structure for high-current ion beam generation improved in the uniformity of ion beams without requiring additional structuring elements, even if manufacturing cost is reduced and manufacturing processes are simplified. SOLUTION: This ion implanting device is provided with multiple operating modes. The device has an ion source and an extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implanting device includes a magnetic analyzer for selecting ions with specific mass-to-charge ratios to pass through a mass slit to be projected to a substrate. A multipole lens is provided to control beam uniformity and collimation. This ion implating method is provided with a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The method can change over ion implantation modes from the one-dimensional scanning to two-dimensional scanning of a target, and from a a simple path to an S-shaped path with deceleration. COPYRIGHT: (C)2007,JPO&INPIT
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