| 摘要 |
A semiconductor laser having an angled facet is provided. The semiconductor laser includes a first distributed Bragg reflector (DBR). The laser further includes an active region coupled to the first DBR, wherein the active region comprises a highly reflective facet and a partially reflective facet, and a second DBR coupled to the active region. The highly reflective facet, the partially reflective facet, the first DBR, and the second DBR form a laser cavity having a shape that is not rectangular. An angled facet emitter enables, for example, single vertical transverse mode operation of optically thick epitaxial gain regions.
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