| 摘要 |
A thin film transistor (TFT), a method of fabricating the same, and a display device including the TFT, are provided. In the TFT, a channel region is connected to a gate electrode so that the influence of a substrate bias is reduced or eliminated. Thus, the threshold voltage of the TFT is reduced, a subthreshold slope can be improved, and a large drain current can be obtained at a low gate voltage.
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