METHODS OF ETCHING NICKEL SILICIDE AND COBALT SILICIDE AND METHODS OF FORMING CONDUCTIVE LINES

摘要

The invention includes methods of etching nickel suicide and cobalt suicide, and methods of forming conductive lines. In one implementation, a substrate comprising nickel suicide is exposed to a fluid comprising H₃PO₄ and H₂O at a temperature of at least 50°C and at a pressure from 350 Torr to 1100 Torr effective to etch nickel suicide from the substrate. In one implementation, at least one of nickel suicide or cobalt suicide is exposed to a fluid comprising H₂SO₄, H₂O₂, H₂O, and HF at a temperature of at least 50 °C and at a pressure from 350 Torr to 1100 Torr effective to etch the at least one of nickel suicide or cobalt suicide from the substrate.