| 摘要 |
A method for manufacturing a semiconductor device is provided to improve on/off characteristics of a transistor and to enhance Vt characteristics by using a P/N junction poly layer as a gate poly layer. A gate oxide layer(110) is formed on a semiconductor substrate(100). A P/N junction poly layer(120,130) is formed on the gate oxide layer. A gate metal layer(140) and a hard mask layer(150) are sequentially formed on the P/N junction poly layer. An etching process is performed on the hard mask layer, the gate metal layer, the P/N junction poly layer and the gate oxide layer to form a gate structure. A spacer(170) is formed at both sidewalls of the gate structure.
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