| 摘要 |
A method for forming a trench type isolation layer is provided to reduce fabrication costs, to minimize the consumption of power and to improve device characteristics by reducing remarkably a dielectric constant of the isolation layer using a water mark. A buffer oxide layer(101) and a pad nitride layer(102) are sequentially formed on a substrate(100). A trench is formed on the resultant structure by etching selectively the pad nitride layer, the buffer oxide layer and the substrate. A cleaning process is performed on the resultant structure to form a water mark(106) along an upper surface of the resultant structure. At this time, the trench is filled with the air(107). An oxide layer is formed on the resultant structure and selectively etched. A planarization process is performed on the resultant structure until the pad nitride layer is exposed to the outside. The exposed pad nitride layer is removed therefrom.
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