发明名称 Dry etch process control using electrically biased stop junctions
摘要 <p>A dry etch process for etching a semiconductor substrate having a p-n heterojunction formed by contact between a p-layer and a n-layer requires application of a reverse bias voltage of less than a p-n breakdown voltage across the p-n heterojunction. A plasma containing chemically reactive negative ions is directed against the n-layer, with etching of non-masked regions of the substrate continuing until it is substantially stopped at the reverse biased p-n heterojunction. The semiconductor substrate can be cooled or periodically recoated with erodable protective material to limit sidewall damage to the semiconductor substrate while still allowing downward etching. This dry etch process is well suited for construction of dimensionally accurate microdevices and microelectromechanical systems.</p>
申请公布号 EP0817250(B1) 申请公布日期 2007.03.07
申请号 EP19970304430 申请日期 1997.06.24
申请人 XEROX CORPORATION 发明人 PEETERS, ERIC;KUBBY, JOEL A.
分类号 H01L21/302;H01L21/3065;B81C1/00;H01L21/306;H01L21/3063;H01L21/465;H01L49/00 主分类号 H01L21/302
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