| 摘要 |
A method for forming an oxide layer in a semiconductor device is provided to improve a cycling characteristic and a retention characteristic by improving a flat bond voltage shift characteristic and a charge trap density. An oxide layer is formed on a semiconductor substrate having a predetermined structure by a radical oxide process. A first annealing process using nitrogen-including gas is performed to introduce nitrogen into the oxide layer. The nitrogen in the oxide layer is re-distributed by a second annealing process. The radical oxide process, the first annealing process and the second annealing process are performed in the same equipment by an in-situ method.
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