发明名称 |
Methods of forming integrated circuit devices having a resistor pattern and plug pattern that are made from a same material |
摘要 |
An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.
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申请公布号 |
US7186617(B2) |
申请公布日期 |
2007.03.06 |
申请号 |
US20040880919 |
申请日期 |
2004.06.30 |
申请人 |
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发明人 |
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分类号 |
H01L21/336;H01L21/70;H01L21/8247;H01L27/00;H01L27/08;H01L27/105;H01L31/113 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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