| 发明名称 |
Ferroelectric material, ferroelectric film and method of manufacturing the same, ferroelectric capacitor and method of manufacturing the same, ferroelectric memory, and piezoelectric device |
| 摘要 |
A ferroelectric material for forming a ferroelectric that is described by a general formula ABO<SUB>3</SUB>, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.
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| 申请公布号 |
US7187025(B2) |
申请公布日期 |
2007.03.06 |
| 申请号 |
US20040807357 |
申请日期 |
2004.03.24 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
HAMADA YASUAKI;KIJIMA TAKESHI;KARASAWA JUNICHI;OHASHI KOJI;NATORI EIJI |
| 分类号 |
B41J2/045;H01L29/76;B41J2/055;B41J2/16;C01G25/00;C01G33/00;C04B35/49;C09D5/23;G11C11/22;H01B3/12;H01L21/316;H01L21/822;H01L21/8246;H01L21/8247;H01L27/04;H01L27/105;H01L27/115;H01L29/788;H01L29/792;H01L41/09;H01L41/187 |
主分类号 |
B41J2/045 |
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