发明名称 |
Narrow-body damascene tri-gate FinFET |
摘要 |
A method of forming a fin field effect transistor includes forming a fin and forming a source region on a first end of the fin and a drain region on a second end of the fin. The method further includes forming a dummy gate with a first semi-conducting material in a first pattern over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the first semi-conducting material to leave a trench in the dielectric layer corresponding to the first pattern, thinning a portion of the fin exposed within the trench, and forming a metal gate within the trench.
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申请公布号 |
US7186599(B2) |
申请公布日期 |
2007.03.06 |
申请号 |
US20040754540 |
申请日期 |
2004.01.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AHMED SHIBLY S.;WANG HAIHONG;YU BIN |
分类号 |
H01L21/00;H01L21/336;H01L21/84;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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