| 摘要 |
A measurement mark ( 3 ) for determining the relative positional accuracy of a progressive projection onto a wafer ( 5 ), the projection being performed with two masks ( 3, 4 ), comprising two structure elements ( 10, 20 ) formed on a respective one of the masks ( 1, 2 ). The structure elements ( 10, 20 ) overlap with regard to their position on the masks so that, during the projection of the second structure element ( 20 ), an electrically conductive structure ( 30 ) formed on the basis of the first structure element on the wafer ( 5 ) is overformed by removal of a portion ( 31 ). In an electrical line width measurement, the reduced width (CD, CD<SUB>30a</SUB>) of the structure ( 30 ) is measured and compared either with the original width ( 62 ) or with that width (CD<SUB>30b</SUB>) of a further partial element ( 30 b) produced by the overforming.
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