发明名称 |
Method of inspecting a leakage current characteristic of a dielectric layer and apparatus for performing the method |
摘要 |
A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.
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申请公布号 |
US7186280(B2) |
申请公布日期 |
2007.03.06 |
申请号 |
US20050175363 |
申请日期 |
2005.07.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
EOM TAE-MIN;JUN CHUNG-SAM;YANG YU-SIN;JEE YUN-JUNG |
分类号 |
H01L21/00;H01L21/66 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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