发明名称 Method of inspecting a leakage current characteristic of a dielectric layer and apparatus for performing the method
摘要 A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.
申请公布号 US7186280(B2) 申请公布日期 2007.03.06
申请号 US20050175363 申请日期 2005.07.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 EOM TAE-MIN;JUN CHUNG-SAM;YANG YU-SIN;JEE YUN-JUNG
分类号 H01L21/00;H01L21/66 主分类号 H01L21/00
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