发明名称 Mixed technology MEMS/SiGe BiCMOS digitalized analog front end with direct RF sampling
摘要 A digitizing analog front end (DAFE) using mixed technology on a single substrate is described. SiGe BiCMOS technology is implemented for the semiconductor components, which include a low noise amplifier and an analog-to-digital converter. Micro Electro Mechanical System (MEMS) switches are used to change the filtering characteristics of several filters, including an anti-aliasing filter and a pre-select and anti-jamming filter.
申请公布号 US7187735(B2) 申请公布日期 2007.03.06
申请号 US20030352407 申请日期 2003.01.28
申请人 RAYTHEON COMPANY 发明人 KENT, III SAMUEL D.;LINDER LLOYD F.;CAI KHIEM V.
分类号 H03H9/00;H01H1/00;H04B1/10 主分类号 H03H9/00
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