| 摘要 |
A method for forming a gate electrode in a semiconductor device is provided to avoid damage to a sidewall of a gate electrode and a substrate in an active region by previously removing a hard mask functioning as an ion implantation preventing layer in a deep N-ion implanting process for forming a photodiode before a gate electrode is formed in a pixel region and a logic region. A gate conductive layer is formed on a substrate(10) including a pixel region and a logic region. First and second hard masks are sequentially deposited on the gate conductive layer. The first and the second hard masks are etched to form first and second hard mask patterns(16,15) on the gate conductive layer in the pixel region and the logic region. An ARC(anti-reflective coating) is formed on the gate conductive layer in the pixel region and logic region. A photoresist layer pattern(18) having a structure of opening the logic region is formed on the gate conductive layer to cover the second hard mask pattern in the pixel region. The photoresist layer pattern and the ARC are used to etch the second hard mask pattern in the logic region. The photoresist layer pattern and the ARC are removed. The gate conductive layer is etched through the first hard mask pattern to form first and second gate electrodes in the pixel region and the logic region. The first hard mask is made of one of an oxide layer, a nitride layer or a composition thereof.
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