发明名称 Film bulk acoustic-wave resonator and method for manufacturing the same
摘要 A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of the piezoelectric layer is defined by a contour, which covers an entire surface of the bottom electrode in a plan view, (d) a top electrode on the piezoelectric layer, (e) an intermediate electrode located between the substrate and the piezoelectric layer, and at the contour of the piezoelectric layer, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and (f) a bottom electrode wiring connected to the intermediate electrode extending from the contour to an outside of the contour in the plan view, wherein a longitudinal vibration mode along a thickness direction of the piezoelectric layer is utilized.
申请公布号 US7187253(B2) 申请公布日期 2007.03.06
申请号 US20050108671 申请日期 2005.04.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SANO KENYA;YANASE NAOKO;ITAYA KAZUHIKO;YASUMOTO TAKAAKI;OHARA RYOICHI;KAWAKUBO TAKASHI;MOTAI TAKAKO
分类号 H01L41/09;H03H9/54;H01L41/08;H01L41/18;H01L41/187;H01L41/22;H03H3/02;H03H9/17;H03H9/58;H03H9/60;H03H9/70 主分类号 H01L41/09
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