发明名称 |
Semiconductor device including dual damascene interconnections |
摘要 |
A method (and structure) of forming an interconnect on a semiconductor substrate, includes forming a relatively narrow first structure in a dielectric formed on a semiconductor substrate, forming a relatively wider second structure in the dielectric formed on the semiconductor substrate, forming a liner in the first and second structures such that the first structure is substantially filled and the second structure is substantially unfilled, and forming a metallization over the liner to completely fill the second structure.
|
申请公布号 |
US7187085(B2) |
申请公布日期 |
2007.03.06 |
申请号 |
US20040853492 |
申请日期 |
2004.05.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLEVENGER LAWRENCE A.;NESBIT LARRY A. |
分类号 |
H01L23/48;H01L23/522;H01L21/3205;H01L21/768;H01L23/52;H01L23/532 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|