| 摘要 |
<p>A method for fabricating a semiconductor device is provided to form a source/drain region whose part is insulated from a semiconductor substrate by forming a source/drain formation region after an isolation layer is formed and by growing an epitaxial layer. A planarized first insulation layer(125) for isolation is formed on a semiconductor substrate(100), exposing a pad insulation layer. The pad insulation layer in the source/drain formation region and a predetermined depth of the semiconductor substrate are etched. A planarized second insulation layer(135) is formed to bury the source/drain formation region. By using the pad insulation layer as a mask, the first and the second insulation layers are etched by a predetermined depth to expose the sidewall of the channel region of the semiconductor substrate. The sidewall of the channel region is epitaxially grown to grow an epitaxial layer(170) in the source/drain formation region. A third insulation layer(145) is formed on the resultant structure, and a planarization etch process is performed to leave a predetermined thickness of the pad insulation layer. The pad insulation layer is removed to form a gate oxide layer(150) and a gate pattern. An LDD(lightly doped drain) ion implantation process is performed by using the gate pattern as a mask. After a spacer(180) is formed on the sidewall of the gate pattern, a source/drain ion implantation process is performed.</p> |
