| 摘要 |
A method of fabricating gates is provided. A first sacrificial layer having a first and a second gate openings therein is formed on a substrate. Next, a gate dielectric layer is formed on the substrate exposed by the first sacrificial layer. Thereafter, a second sacrificial layer is filled in the first and second gate openings. The second sacrificial layer in the first gate opening is removed, and then a first conductive layer is filled in the first gate opening as a gate of a MOS transistor of a first conductivity type. Then, the second sacrificial layer in the second gate opening is removed. A second conductive layer is filled in the second gate opening as a gate of a MOS transistor of a second conductivity type, and the first sacrificial layer is removed.
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