发明名称 PROCEDE ET APPAREIL DE MESURE DE PLAQUES DE SEMI-CONDUCTEUR
摘要 <p>A method of measuring a circular wafer in which the surface (A) of the wafer is divided into a plurality (N) of concentric rings of constant surface area (A/N), and at least one measurement point (P<SUB>n</SUB>) is positioned on each ring. The outside radius (R<SUB>n</SUB>) of each ring is calculated using the following formula: <?in-line-formulae description="In-line Formulae" end="lead"?>R<SUB>n</SUB>=R<SUB>N</SUB>(n/N)<SUP>1/2</SUP><?in-line-formulae description="In-line Formulae" end="tail"?> in which n varies from 1 to N. In this manner, rings are obtained that become narrower with increasing distance from the center of the wafer, thereby providing measurement points that become closer together towards the edge of the wafer, and covering only the useful zone of the wafer to be measured, guaranteeing that no measurement is made in an annular exclusion zone.</p>
申请公布号 FR2878075(B1) 申请公布日期 2007.03.02
申请号 FR20040012064 申请日期 2004.11.15
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES SOCIETE ANONYME 发明人 ANGELLIER CEDRIC
分类号 H01L21/66;B24B37/013;G01D11/00;G01R31/00 主分类号 H01L21/66
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