| 摘要 |
A method for fabricating a ZnO thin film which is doped with metal and has improved crystallization, surface shape, electrical characteristics and permeability using magnetron co-sputtering is provided. A method for fabricating a ZnO thin film doped with metal using magnetron co-sputtering comprises the steps of: depositing the ZnO thin film doped with metal on a substrate using magnetron co-sputtering such that an RF electric power ratio represented by the mathematical expression, R=[RF electric power relative to a metal doped ZnO target]/[RF electric power relative to a non-doped ZnO target], becomes 0.5 to 1.5; and subjecting the ZnO thin film doped with metal to post-heat treatment. The R value is 0.9 to 1.1. The step of depositing the ZnO thin film doped with metal on the substrate comprises the step of using magnetron co-sputtering on a ZnO target that is doped with a metal element and a ZnO target that is not doped with the metal element. The metal is any one of B, Al, Ga and In.
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