ELECTRON EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An electron emission device and a manufacturing method thereof are provided to minimize an interval between a gate electrode and an electron emission portion by forming openings on an upper portion of an insulating layer. A electron emission device includes a substrate; a cathode(12) formed on the substrate; a gate electrode(14) formed on the substrate, with an insulating layer(30) being interposed between the cathode and the gate electrode; an electron emission portion(16) formed on the cathode and exposed through openings(32) each formed on the insulating layer and the gate electrode. The opening formed on the insulating layer has a first opening with a cross area decreasing towards the substrate and a second opening(34) with a cross area increasing towards the substrate.