Integrate circuit formation involves selectively forming active channel region on substrate parallel to crystal with specific orientation

摘要

An active channel region for n-metal oxide semiconductor (NMOS) and p-MOS (PMOS) transistors are selectively formed on a substrate parallel to a (100) crystal orientation. The source/drain regions of NMOS and PMOS transistors with carbon (C) impurities are selectively formed. A tensile layer (300) is formed on the NMOS transistor to provide tensile strain in the active region. An independent claim is included for complementary MOS (CMOS) integrated circuit.