| 摘要 |
A semiconductor device is provided to avoid a bunker defect of an interlayer dielectric by recessing a predetermined depth of the interlayer dielectric in a manner that a lower electrode doesn't directly come in contact with the interlayer dielectric and by interposing an etch stop layer between the lower electrode and the interlayer dielectric such that the etch stop layer has different etch selectivity from that of the interlayer dielectric. An interlayer dielectric(112) is formed on a substrate(110). A contact plug(114) is formed in the interlayer dielectric in a manner that a part of the contact plug protrudes from the interlayer dielectric. An etch stop layer(118) is formed on the interlayer dielectric in a manner that the upper part of the contact plug is exposed, made of a material having different etch selectivity from that of the interlayer dielectric. A lower electrode(126) for a capacitor is separated from the interlayer dielectric by the etc stop layer so as not to directly come in contact with the interlayer dielectric. A part of the lower electrode is connected to the contact plug. The lower electrode can be made of TiN.
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