DIRECTIONALLY CONTROLLED GROWTH OF NANOWHISKERS

摘要

Nanowhiskers are grown in a non- preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, (001) III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential (111)B direction. As one example, (001) InP nano- wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults. ® KIPO & WIPO 2007