发明名称 MEMORY DEVICE
摘要 A memory device is provided to prevent noise from being applied to a pad where a low current is applied, by adjacently bonding a number of pads of a low current and adjacently bonding a number of pads of high current. In a memory device comprising a number of power supply pads and a number of first and second internal circuits, a first pad group comprises the power supply pads connected to the respective first internal circuits. A second pad group comprises the power supply pads connected to the respective second internal circuits. The first internal circuit uses a lower current than the second internal circuit. In the first and second pad groups, more than two power supply pads are multi-bonded.
申请公布号 KR20070024004(A) 申请公布日期 2007.03.02
申请号 KR20050078444 申请日期 2005.08.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, KANG SEOL;PARK, KEE TEOK
分类号 G11C5/06;G11C5/08 主分类号 G11C5/06
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