| 摘要 |
A sensing margin varying circuit and a semiconductor memory device comprising the same are provided to control the sensing margin by using a fuse or an external pin. A dummy column part outputs a ready signal for controlling a sensing margin until a bit line pair outputted from a bit cell array is sensed, in response to a data control signal and a data enable signal enabled during a data read operation. A control part outputs a sensing enable signal in response to the ready signal. A sense amplifier part senses the bit line pair outputted from the bit cell array in response to the sensing enable signal. A sensing margin control part(450) controls the sensing margin until the bit line pair is outputted and sensed, by adjusting skew of the ready signal.
|
